Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure

被引：116

作者：

Marris-Morini, Delphine ^{[1
]}

Vivien, Laurent ^{[1
]}

Fedeli, Jean Marc ^{[2
]}

Cassan, Eric ^{[1
]}

Lyan, Philippe ^{[2
]}

Laval, Suzanne ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Minatec, CEA LETI, F-38054 Grenoble, France

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 01期

关键词：

D O I：

10.1364/OE.16.000334

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz. (c) 2007 Optical Society of America.

引用

收藏

页码：334 / 339

页数：6

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