Photoinduced Electron Transfer in Dye-Sensitized SnO2 Nanowire Field-Effect Transistors

被引：23

作者：

Wu, Hsing-Chen ^{[1
]}

Huang, Yuan-Chang ^{[1
]}

Ding, I-Kang ^{[3
]}

Chen, Chun-Cing ^{[3
]}

Yang, Yi-Han ^{[1
]}

Tsai, Chia-Chang ^{[3
]}

Chen, Chii-Dong ^{[2
,4
]}

Chen, Yit-Tsong ^{[1
,3
]}

机构：

[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan

[2] Acad Sinica, Inst Phys, Taipei 11529, Nankang, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

[4] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2011年 / 21卷 / 03期

关键词：

SEMICONDUCTING OXIDE NANOBELTS; GAS SENSORS; SOLAR-CELLS; SILICON NANOWIRES; RAMAN-SCATTERING; LASER-ABLATION; CHLOROPHYLL-A; FILMS; PHOTOSENSITIZATION; PHOTOLUMINESCENCE;

D O I：

10.1002/adfm.201001521

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electron transfer from excited dye molecules (chlorophyll or fluorescein) to a semiconductor is demonstrated by photoaction and photoluminescence spectra on field-effect transistors consisting of dye-sensitized individual SnO2 nanowires. The photoaction spectrum shows a much better resolution for nanowires non-covalently functionalized with dye molecules than for dyes deposited on SnO2 nanoparticle-films. Possible reasons for the deviation between the photoaction spectra and ordinary optical absorption spectra as well as for the current-tail appearing along the falling edge are addressed. In dye-sensitized nanowires, electron transfer from photo-excited dyes to nanowires is analyzed by comparing gate-voltage dependences in photoaction and photoluminescence spectra. The importance of this study is in the understanding of electron injection and recombination provided, as well as the performance optimization of nanowire-based dye-sensitized solar cells.

引用

页码：474 / 479

页数：6

共 37 条

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