Temperature dependence of the tunneling magnetoresistance and magnetization have been measured for spin-valve magnetic tunnel junctions where the free magnetic electrode is a Cu38Ni62 alloy with a Curie temperature of roughly 240 K. The temperature dependence of the normalized magnetoresistance is found to be independent of the voltage bias applied across the junction at all temperatures. By extracting the temperature dependence of the tunneling spin polarization of the CuNi electrode using the Julliere formula, we show that the tunneling spin polarization as a function of temperature can be related to the temperature-dependent magnetization; the anticipated linear relation is not obtained. This nonlinear polarization versus magnetization relation, in addition to the linear relation obtained previously by other tunneling methods, are both reproduced by a theoretical model that incorporates multiple s-d hybridized bands into the tunneling process.
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Korea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Lee, Kyoung-Il
Roh, Jong Wook
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Roh, Jong Wook
Lee, Kiyoung
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Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, EnglandKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Lee, Kiyoung
Chang, Joonyeon
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Korea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Chang, Joonyeon
Shin, Kyung-Ho
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Korea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South KoreaKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Shin, Kyung-Ho
Johnson, Mark
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USN, Res Lab, Washington, DC 20375 USAKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea
Johnson, Mark
Lee, Wooyoung
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Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South KoreaKorea Inst Sci & Technol, Nano Convergence Devices Ctr, Seoul 136791, South Korea