Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

被引：42

作者：

Monroy, E ^{[1
]}

Calle, F

Muñoz, E

Omnès, F

Beaumont, B

Gibart, P

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, Madrid 28040, Spain

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 03期

关键词：

AlGaN; detectors; photoconductive; photovoltaic; ultraviolet (UV);

D O I：

10.1007/s11664-999-0021-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the photodetection mechanism on the performance of AlGaN ultraviolet (UV) detectors is analyzed by studying the characteristics of photoconductors and photovoltaic Schottky diodes fabricated on the same samples. The photoconductive response below the bandgap is not a direct function of the absorption coefficient; Instead, it is amplified by the dominant photoconductive responsivity mechanism, which is attenuated as the chopping frequency increases. On the contrary, photovoltaic detectors are characterized by a sharp UV/visible contrast, mainly dependent on the absorption properties of the material. Thus, these detectors are more suitable for selective UV applications, such as ozone layer monitoring or flame detection.

引用

页码：240 / 245

页数：6

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