Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

被引：42
作者：
Monroy, E [1 ]
Calle, F
Muñoz, E
Omnès, F
Beaumont, B
Gibart, P
机构：
[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, Madrid 28040, Spain
[2] CNRS, CRHEA, F-06560 Valbonne, France
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 03期
关键词：
AlGaN; detectors; photoconductive; photovoltaic; ultraviolet (UV);
D O I：
10.1007/s11664-999-0021-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of the photodetection mechanism on the performance of AlGaN ultraviolet (UV) detectors is analyzed by studying the characteristics of photoconductors and photovoltaic Schottky diodes fabricated on the same samples. The photoconductive response below the bandgap is not a direct function of the absorption coefficient; Instead, it is amplified by the dominant photoconductive responsivity mechanism, which is attenuated as the chopping frequency increases. On the contrary, photovoltaic detectors are characterized by a sharp UV/visible contrast, mainly dependent on the absorption properties of the material. Thus, these detectors are more suitable for selective UV applications, such as ozone layer monitoring or flame detection.
引用
收藏
页码：240 / 245
页数：6
相关论文
共 32 条
  • [1] BEARDIE G, 1997, APPL PHYS LETT, V71, P1092
  • [2] Properties of a photovoltaic detector based on an n-type GaN Schottky barrier
    Binet, F
    Duboz, JY
    Laurent, N
    Rosencher, E
    Briot, O
    Aulombard, RL
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) : 6449 - 6454
  • [3] Mechanisms of recombination in GaN photodetectors
    Binet, F
    Duboz, JY
    Rosencher, E
    Scholz, F
    Harle, V
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1202 - 1204
  • [4] Persistent photoconductivity in n-type GaN
    Chen, HM
    Chen, YF
    Lee, MC
    Feng, MS
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) : 899 - 901
  • [5] Schottky barrier detectors on GaN for visible-blind ultraviolet detection
    Chen, Q
    Yang, JW
    Osinsky, A
    Gangopadhyay, S
    Lim, B
    Anwar, MZ
    Khan, MA
    Kuksenkov, D
    Temkin, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2277 - 2279
  • [6] Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE
    Flannery, LB
    Harrison, I
    Lacklison, DE
    Dykeman, RI
    Cheng, TS
    Foxon, CT
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 307 - 310
  • [7] Photoconductive gain modelling of GaN photoconductors
    Garrido, JA
    Monroy, E
    Izpura, I
    Munoz, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) : 563 - 568
  • [8] Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
    Hansen, PJ
    Strausser, YE
    Erickson, AN
    Tarsa, EJ
    Kozodoy, P
    Brazel, EG
    Ibbetson, JP
    Mishra, U
    Narayanamurti, V
    DenBaars, SP
    Speck, JS
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2247 - 2249
  • [9] Persistent photoconductivity in n-type GaN
    Hirsch, MT
    Wolk, JA
    Walukiewicz, W
    Haller, EE
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (08) : 1098 - 1100
  • [10] Metastability and persistent photoconductivity in Mg-doped p-type GaN
    Johnson, C
    Lin, JY
    Jiang, HX
    Khan, MA
    Sun, CJ
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1808 - 1810
1234