High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

被引：104

作者：

He, Hongtao ^{[1
]}

Li, Baikui ^{[1
]}

Liu, Hongchao ^{[1
]}

Guo, Xin ^{[2
]}

Wang, Ziyan ^{[2
]}

Xie, Maohai ^{[2
]}

Wang, Jiannong ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期

关键词：

Ultrathin films - Bismuth compounds - Electric insulators - Quantum theory - Magnetoresistance - Selenium compounds;

D O I：

10.1063/1.3677669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677669]

引用

页数：3

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