Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths

被引：26

作者：

Han, Yu ^{[1
]}

Li, Qiang ^{[1
]}

Zhu, Si ^{[1
]}

Ng, Kar Wei ^{[2
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Macau, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 21期

关键词：

ROOM-TEMPERATURE; NANOWIRE LASERS; 001; SILICON;

D O I：

10.1063/1.5005173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report continuous-wave lasing from InP/InGaAs nanoridges grown on a patterned (001) Si substrate by aspect ratio trapping. Multi-InGaAs ridge quantum wells inside InP nanoridges are designed as active gain materials for emission in the 1500 nm band. The good crystalline quality and optical property of the InGaAs quantum wells are attested by transmission electron microscopy and microphotoluminescence measurements. After transfer of the InP/InGaAs nanoridges onto a SiO2/Si substrate, amplified Fabry-Perot resonant modes at room temperature and multi-mode lasing behavior in the 1400 nm band under continuous-wave optical pumping at 4.5K are observed. This result thus marks an important step towards integrating InP/InGaAs nanolasers directly grown on microelectronic standard (001) Si substrates. Published by AIP Publishing.

引用

页数：5

共 39 条

[1] Lasing in single cadmium sulfide nanowire optical cavities [J].

Agarwal, R ;

Barrelet, CJ ;

Lieber, CM .

NANO LETTERS, 2005, 5 (05) :917-920

[2] Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures [J].

Biasiol, G ;

Gustafsson, A ;

Leifer, K ;

Kapon, E .

PHYSICAL REVIEW B, 2002, 65 (20) :2053061-20530615

[3]

Chen R, 2011, NAT PHOTONICS, V5, P170, DOI [10.1038/nphoton.2010.315, 10.1038/NPHOTON.2010.315]

[4]

Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/NPHOTON.2016.21, 10.1038/nphoton.2016.21]

[5] Near-infrared semiconductor subwavelength-wire lasers [J].

Chin, AH ;

Vaddiraju, S ;

Maslov, AV ;

Ning, CZ ;

Sunkara, MK ;

Meyyappan, M .

APPLIED PHYSICS LETTERS, 2006, 88 (16)

[6] Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices [J].

Cipro, R. ;

Baron, T. ;

Martin, M. ;

Moeyaert, J. ;

David, S. ;

Gorbenko, V. ;

Bassani, F. ;

Bogumilowicz, Y. ;

Barnes, J. P. ;

Rochat, N. ;

Loup, V. ;

Vizioz, C. ;

Allouti, N. ;

Chauvin, N. ;

Bao, X. Y. ;

Ye, Z. ;

Pin, J. B. ;

Sanchez, E. .

APPLIED PHYSICS LETTERS, 2014, 104 (26)

[7] Lasing in ZnS nanowires grown on anodic aluminum oxide templates [J].

Ding, JX ;

Zapien, JA ;

Chen, WW ;

Lifshitz, Y ;

Lee, ST ;

Meng, XM .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2361-2363

[8] Single-nanowire electrically driven lasers [J].

Duan, XF ;

Huang, Y ;

Agarwal, R ;

Lieber, CM .

NATURE, 2003, 421 (6920) :241-245

[9] Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing [J].

Gao, Qian ;

Saxena, Dhruv ;

Wang, Fan ;

Fu, Lan ;

Mokkapati, Sudha ;

Guo, Yanan ;

Li, Li ;

Wong-Leung, Jennifer ;

Caroff, Philippe ;

Tan, Hark Hoe ;

Jagadish, Chennupati .

NANO LETTERS, 2014, 14 (09) :5206-5211

[10] GaN nanowire lasers with low lasing thresholds [J].

Gradecak, S ;

Qian, F ;

Li, Y ;

Park, HG ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

← 1 2 3 4 →