Extraction of an avalanche diode noise model for its application as an on-wafer noise source

被引：16

作者：

Maya, MC ^{[1
]}

Lázaro, A ^{[1
]}

Pradell, L ^{[1
]}

机构：

[1] UPC, Dept TSC, Barcelona 08034, Spain

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 38卷 / 02期

关键词：

on-wafer noise source; excess noise ratio; small-signal model; noise temperature; noise parameters;

D O I：

10.1002/mop.10979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on-wafer noise source. It is based on the determination of a broadband device noise circuit-model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz. (C) 2003 Wiley Periodicals, Inc.

引用

页码：89 / 92

页数：4

共 8 条

[1] A novel on-wafer resistive noise source [J].