Reduction of Specific Contact Resistance on n-Type Implanted 4H-SiC Through Argon Inductively Coupled Plasma Treatment and Post-Metal Deposition Annealing

被引：10

作者：

Cheng, Jung-Chien ^{[1
]}

Tsui, Bing-Yue ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 12期

关键词：

Silicon carbide; specific contact resistance; inductively coupled plasma treatment; Ohmic contacts; SILICON-CARBIDE; OHMIC CONTACTS; NICKEL SILICIDE; BARRIER HEIGHT; SCHOTTKY; DIODES;

D O I：

10.1109/LED.2017.2760884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of Ar inductively coupled plasma (ICP) treatment on the Ohmic contact on n(+)-implanted SiC were investigated in this letter. The effects of ICP treatment were negligible on the Ni-silicide contact, because the treated surface layer was consumed during silicide formation. However, for the Ti contact, as the annealing temperature increased, the ion-bombardment-induced damage layer transformed to a uniform amorphous C-rich layer, and the specific contact resistance of the ICP-treated Ti contact decreased to 8.3 x 10(-7) Omega-cm(2) after 600 degrees C annealing. This is the lowest value achieved at such a low process temperature. Thus, appropriate ICP treatment and annealing can be used to form low-resistivity Ohmic contacts with a lower thermal budget that are comparable with Ni-based silicide Ohmic contacts.

引用

页码：1700 / 1703

页数：4

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