A HIGH-EFFICIENCY 60-GHz INDIRECT LOCAL OSCILLATOR IN 90-nm CMOS

被引：3
|
作者：
Byeon, Chul Woo [1 ]
Park, Chul Soon [2 ]
机构：
[1] Wonkwang Univ, Dept Elect Engn, Iksan, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2016年 / 58卷 / 09期
关键词：
VCO; doubler; high efficiency; high power; LO; CMOS; 60; GHz; millimeter wave;
D O I：
10.1002/mop.29981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a highly efficient 60-GHz local oscillator ( LO) in a 90-nm CMOS. The proposed LO consists a 30-GHz LC VCO and a frequency doubler. With this topology, the LO generator has a high output power of -0.1 dBm at 58.2 GHz, consuming only 10.4 mW from a 0.8 V supply, resulting in a record efficiency of 9.4% among ;60-GHz CMOS LOs. At 58.2 GHz, the phase noise is -115 dBc/Hz at a 10-MHz offset. The measured frequency tuning range is from 57.56 to 64.47 GHz. (C) 2016 Wiley Periodicals, Inc.
引用
收藏
页码：2091 / 2093
页数：3
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