S and Te inter-diffusion in CdTe/CdS hetero junction

被引：25

作者：

Enriquez, J. Pantoja ^{[1
]}

Barojas, E. Gomez

Gonzalez, R. Silva

Pal, U.

机构：

[1] Univ Politecn Chipas, Cuerpo Acad Energia & Sustentabilidad, Tuxtla Gutierrez 29010, Chiapas, Mexico

[2] CIDS ICUAP, Puebla 72000, Mexico

[3] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 15-16期

关键词：

CdS; CdTe; AES; CdTe/CdS; inter-diffusion;

D O I：

10.1016/j.solmat.2007.05.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe1-xSx ternary compound at the CdTe-CdS interface. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1392 / 1397

页数：6

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