S and Te inter-diffusion in CdTe/CdS hetero junction

被引:25
作者
Enriquez, J. Pantoja [1 ]
Barojas, E. Gomez
Gonzalez, R. Silva
Pal, U.
机构
[1] Univ Politecn Chipas, Cuerpo Acad Energia & Sustentabilidad, Tuxtla Gutierrez 29010, Chiapas, Mexico
[2] CIDS ICUAP, Puebla 72000, Mexico
[3] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
关键词
CdS; CdTe; AES; CdTe/CdS; inter-diffusion;
D O I
10.1016/j.solmat.2007.05.008
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe1-xSx ternary compound at the CdTe-CdS interface. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1392 / 1397
页数:6
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