Nanoscale resistance switching in manganite thin films: Sharp voltage threshold and pulse-width dependence

被引：13

作者：

Krisponeit, Jon-Olaf ^{[1
]}

Kalkert, Christin ^{[1
]}

Damaschke, Bernd ^{[1
]}

Moshnyaga, Vasily ^{[1
]}

Samwer, Konrad ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 14期

关键词：

MAGNETORESISTANCE; TRANSITIONS; CHARGE;

D O I：

10.1103/PhysRevB.82.144440

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the local-conductivity properties of a La0.8Ca0.2MnO3 thin film, studied by conductive atomic force microscopy. Nonvolatile and bipolar reversible switching of nanometer-sized regions was observed. A threshold voltage, U-c approximate to 3 V, and a logarithmic pulse-width dependence compatible with domain-wall creep were revealed. The results are difficult to explain in terms of an ionic drift scenario but rather indicate a switching mechanism based on orbital and accompanying structural changes. A phenomenological model of an electric field-induced structural transition is proposed.

引用

页数：6