On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

被引：52

作者：

Zatryb, G. ^{[1
]}

Podhorodecki, A. ^{[1
]}

Misiewicz, J. ^{[1
]}

Cardin, J. ^{[2
]}

Gourbilleau, F. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] UMR CNRS CEA ENSICAEN UCBN, CIMAP, F-14050 Caen 4, France

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

POROUS SILICON; LUMINESCENCE; MULTILAYERS; RELAXATION; ABSORPTION; MECHANISMS; DYNAMICS; SI;

D O I：

10.1186/1556-276X-6-106

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.

引用

页数：8

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