Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

被引：1

作者：

Budzulyak, SI

Dotsenko, YP

Ermakov, VM

Kolomoets, VV

Korbutyak, DV

Venger, EF

Fukuzawa, M

Yamada, M

Liarokapis, E

机构：

[1] Inst Semicond Phys, Dept Galvanomagnet Properties Semicond, UA-03028 Kyiv 28, Ukraine

[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 606, Japan

[3] Natl Tech Univ Athens, Dept Phys, GR-15773 Athens, Greece

来源：

PHYSICA B | 2001年 / 302卷

关键词：

semiconductors; high pressure; defect states;

D O I：

10.1016/S0921-4526(01)00400-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In order to identify tensoeffect mechanisms in neutron transmutation doped (NTD) n-Si(P), the tensoresistive and tense-Hall effects were investigated in highly strained crystals with phosphorous concentration 3 x 10(13)-7.2 x 10(14) cm(-3) and under different doses of gamma -radiation (up to 8 x 10(17) quanta/cm(2)). It was determined that according to the defect structure and its corresponding energy level within the band gap, an appreciable decrease of the activation energy of different types of radiation-induced defects and accompanied increase of the concentration of free electrons occur in different range of uniaxial pressure. The mechanism indicated above together with the intervalley redistribution of electrons (Smith-Herring mechanism) and pressure dependence of the f-scattering probability determine tensoeffect peculiarities which were investigated in highly strained NTD and gamma -irradiated Si(P). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：12 / 16

页数：5