Defect states in transmutation-doped γ-irradiated Cz-Si crystals under high uniaxial pressure

In order to identify tensoeffect mechanisms in neutron transmutation doped (NTD) n-Si(P), the tensoresistive and tense-Hall effects were investigated in highly strained crystals with phosphorous concentration 3 x 10(13)-7.2 x 10(14) cm(-3) and under different doses of gamma -radiation (up to 8 x 10(17) quanta/cm(2)). It was determined that according to the defect structure and its corresponding energy level within the band gap, an appreciable decrease of the activation energy of different types of radiation-induced defects and accompanied increase of the concentration of free electrons occur in different range of uniaxial pressure. The mechanism indicated above together with the intervalley redistribution of electrons (Smith-Herring mechanism) and pressure dependence of the f-scattering probability determine tensoeffect peculiarities which were investigated in highly strained NTD and gamma -irradiated Si(P). (C) 2001 Elsevier Science B.V. All rights reserved.