Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition

被引：8

作者：

Wang, Xiaoyan ^{[1
]}

Wang, Xiaoliang ^{[1
]}

Hu, Guoxin ^{[1
]}

Wang, Baozhu ^{[1
]}

Ma, Zhiyong ^{[1
]}

Xiao, Hongling ^{[1
]}

Wang, Cuimei ^{[1
]}

Ran, Junxue ^{[1
]}

Li, Jianping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 8-9期

基金：

中国国家自然科学基金;

关键词：

AlxGa1-xN; MOCVD; high Al content; photodetector;

D O I：

10.1016/j.mejo.2007.07.090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：838 / 841

页数：4

共 18 条

[1] High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
Adivarahan, V
Wu, S
Zhang, JP
Chitnis, A
Shatalov, M
Mandavilli, V
Gaska, R
Khan, MA
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4762 - 4764
[2] Amano H, 1999, PHYS STATUS SOLIDI B, V216, P683, DOI 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO
[3] 2-4
[4] Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
Bethoux, JM
Vennéguès, P
Natali, F
Feltin, E
Tottereau, O
Nataf, G
De Mierry, P
Semond, F
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6499 - 6507
[5] BOWEN DK, 1998, HIGH RESOLUTION XRAY, P64
[6] AlGaN layers grown on GaN using strain-relief interlayers
Chen, CQ
Zhang, JP
Gaevski, ME
Wang, HM
Sun, WH
Fareed, RSQ
Yang, JW
Khan, MA
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (26) : 4961 - 4963
[7] Solar blind detectors based on AlGaN grown on sapphire
Duboz, JY
Grandjean, N
Omnès, F
Reverchon, JL
Mosca, M
[J]. E-MRS 2004 Fall Meeting Symposia C and F, 2005, 2 (03): : 964 - 971
[8] Han J, 1999, MRS INTERNET J N S R, V4
[9] Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
Han, J
Waldrip, KE
Lee, SR
Figiel, JJ
Hearne, SJ
Petersen, GA
Myers, SM
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (01) : 67 - 69
[10] Metalorganic chemical vapor deposition of group III nitrides - a discussion of critical issues
Keller, S
DenBaars, SP
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 479 - 486

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