Phase-change optical recording: Past, present, future

被引:20
作者
Kolobov, A. N.
Fons, P.
Tominaga, J.
机构
[1] Natl Inst Adv Ind Sci & Technol, Ctr Appl Near Field Opt Res, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Montpellier 2, Lab Physicochim Mat Condensee, CNRS, UMR 5617, F-34095 Montpellier 5, France
关键词
phase-change memories; chalcogenides; EXAFS; XANES;
D O I
10.1016/j.tsf.2006.11.183
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码:7534 / 7537
页数:4
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