A 350mV Complementary 4-5 GHz VCO based on a 4-Port Transformer Resonator with 195.8dBc/Hz Peak FOM in 22nm FDSOI

被引:17
|
作者
El-Aassar, Omar [1 ]
Rebeiz, Gabriel M. [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92103 USA
关键词
Voltage-controlled oscillator (VCO); figure-of-merit (FOM); low phase noise; transformer; ultra-low voltage/power; FDSOI CMOS;
D O I
10.1109/rfic.2019.8701844
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an ultra-low voltage and power complementary VCO topology based on a 4-port transformer resonator. The design benefits from the high current efficiency of a CMOS topology and the low phase noise and supply voltage of the NMOS/PMOS-only structure without sacrificing reliability. A 4-port transformer resonator is used to provide two differential-mode (DM) and two common-mode (CM) harmonic impedances for lower phase noise, voltage supply, and sensitivity to CM tuning. The CMOS VCO is implemented in 22nm FDSOI with a core area of 0.19 mm(2). The VCO dissipates < 0.45mW from 350mV supply while achieving a peak figure-of-merit (FOM) of 192-195.8 dBc/Hz across the 20% continuous tuning range of 4.06-to-4.96 GHz. To the authors knowledge, the 4-port resonator-based CMOS VCO has the highest reported FOM for oscillators with sub-0.5mW power consumption and the lowest supply voltage (350mV) for complementary designs.
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页码:159 / 162
页数:4
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