Structures and properties of La- and Sm-doped BaTiO3 sputtered films:: Post-annealing and dopant effects

被引：9

作者：

Wu, C. H. ^{[2
]}

Chu, J. P. ^{[1
]}

Chang, W. Z. ^{[2
]}

John, V. S. ^{[2
]}

Wang, S. F. ^{[3
]}

Lin, C. H. ^{[3
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Polymer Engn, Taipei 10607, Taiwan

[2] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 20224, Taiwan

[3] Natl Taipei Univ Technol, Dept Mat & Minerals Resources Engn, Taipei 10608, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 01期

关键词：

D O I：

10.1063/1.2827501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

200-nm-thick La- and Sm-doped BaTiO3 thin films with A/B ratio of unity fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si substrate have been characterized. The effects of post-annealing and the amount of dopant on structure and electrical properties were studied. X-ray di ffraction studies reveal that the films annealed at 750 degrees C show tetragonal BaTiO3 crystal structure without any detectable second phase formation. X-ray photoelectron spectroscopy results confirm that La substitutes the A site and Sm is in the B site in lightly doped films. La2O3 or Sm2O3 is present in the BaTiO3 structure when the dopant content is more than 1.4 at. % La or 1.0% Sm. The permittivity increases with increasing annealing temperature up to 750 degrees C due to the coarse grains and better crystallinity. The leakage current property is found to vary with the type of dopant.

引用

页数：5

共 22 条

[11] DIELECTRIC-PROPERTIES OF (BAXSR1-X)TIO3 THIN-FILMS PREPARED BY RF-SPUTTERING FOR DYNAMIC RANDOM-ACCESS MEMORY APPLICATION
KUROIWA, T
TSUNEMINE, Y
HORIKAWA, T
MAKITA, T
TANIMURA, J
MIKAMI, N
SATO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5187 - 5191
[12] Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate
Lee, SY
Tseng, TY
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (10) : 1797 - 1799
[13] Capacitance and admittance spectroscopy analysis of hydrogen-degraded Pt/(Ba, Sr)TiO3/Pt thin-film capacitors
Liedtke, R
Grossmann, M
Waser, R
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (13) : 2045 - 2047
[14] Ohring M., 1992, MAT SCI THIN FILMS
[15] STRUCTURES AND ELECTRICAL-PROPERTIES OF BARIUM STRONTIUM-TITANATE THIN-FILMS GROWN BY MULTI-ION-BEAM REACTIVE SPUTTERING TECHNIQUE
PENG, CJ
KRUPANIDHI, SB
[J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (03) : 708 - 726
[16] RF magnetron sputtered high-k barium strontium titanate thin films on magnetoresistive La0.7Ca0.3MnO3 electrode
Samantaray, CB
Dhar, A
Mukherjee, ML
Bhattacharya, D
Ray, SK
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (01): : 14 - 17
[17] TAKADA K, 1986, ADV CERAM, V19, P147
[18] Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering
Tsai, MS
Sun, SC
Tseng, TY
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (07) : 3482 - 3487
[19] Dielectric properties and microstructure of nano-MgO dispersed Ba0.3Sr0.7TiO3 thin films prepared by sputter deposition -: art. no. 014107
Wang, SF
Chu, JP
Lin, CC
Mahalingam, T
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
[20] WU CH, 1952, J APPL PHYS, V98, P26109

← 1 2 3 →