Structures and properties of La- and Sm-doped BaTiO3 sputtered films:: Post-annealing and dopant effects

被引：9

作者：

Wu, C. H. ^{[2
]}

Chu, J. P. ^{[1
]}

Chang, W. Z. ^{[2
]}

John, V. S. ^{[2
]}

Wang, S. F. ^{[3
]}

Lin, C. H. ^{[3
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Polymer Engn, Taipei 10607, Taiwan

[2] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 20224, Taiwan

[3] Natl Taipei Univ Technol, Dept Mat & Minerals Resources Engn, Taipei 10608, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 01期

关键词：

D O I：

10.1063/1.2827501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

200-nm-thick La- and Sm-doped BaTiO3 thin films with A/B ratio of unity fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si substrate have been characterized. The effects of post-annealing and the amount of dopant on structure and electrical properties were studied. X-ray di ffraction studies reveal that the films annealed at 750 degrees C show tetragonal BaTiO3 crystal structure without any detectable second phase formation. X-ray photoelectron spectroscopy results confirm that La substitutes the A site and Sm is in the B site in lightly doped films. La2O3 or Sm2O3 is present in the BaTiO3 structure when the dopant content is more than 1.4 at. % La or 1.0% Sm. The permittivity increases with increasing annealing temperature up to 750 degrees C due to the coarse grains and better crystallinity. The leakage current property is found to vary with the type of dopant.

引用

页数：5

共 22 条

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