An analytical breakdown model of high voltage SOI device considering the modulation of step buried-oxide interface charges

被引：0

作者：

Guo, YF ^{[1
]}

Li, ZJ ^{[1
]}

Zhang, B ^{[1
]}

Fang, J ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, IC Design Ctr, Chengdu 610064, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

SOI; step buried-oxide interface charges; breakdown voltage; model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Base on solving 2-D Poisson equation, an ana breakdown model of high voltage SOI device with Step Buried-oxide Interface Charges (SBIC) is proposed. A new universal RESURF condition of SOI high voltage device with/without the buried-oxide interface charges is derived at the divided region number n from 0 to infinity. By the model, the breakdown characteristics of the new device are discussed for different structure parameters. It is shown that: In the vertical, the electric field of buried oxide layer approaches to the critic value Of SiO2 600V/mu m based on the continuity of electric displacement. In the lateral, a uniform profile of the surface electric filed is obtained due to the modulation of SBIC. As a result, a very high breakdown voltage is exhibited. The comparisons of analytical results with numerical simulations by MEDICI have been shown a fair agreement.

引用

页码：357 / 360

页数：4

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