Development of an InGaAs SPAD 2D Array for Flash LIDAR

被引:23
作者
Baba, Takashi [1 ]
Suzuki, Yoshihito [1 ]
Makino, Kenji [1 ]
Fujita, Takuya [1 ]
Hashi, Tatsuya [1 ]
Adachi, Shunsuke [1 ]
Nakamura, Shigeyuki [1 ]
Yamamoto, Koei [1 ]
机构
[1] Hamamatsu Photon KK, Higashi Ku, 1126-1 Ichino Cho, Hamamatsu, Shizuoka 4358558, Japan
来源
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XV | 2018年 / 10540卷
关键词
Indium Gallium Arsenide (InGaAs); Single-photon avalanche diode (SPAD); Hybrid structure; Time-to-digital converter; Flash LIDAR;
D O I
10.1117/12.2289270
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An InGaAs Single-Photon Avalanche Photodiode (SPAD) array and a hybrid photon-counting image sensor have been developed for time-resolved applications in the near infrared region, especially for Flash LIDAR. The implemented array has a 100 mu m pitch 32 x32 matrix, and the active area in each pixel has a diameter of 12 mu m. A dedicated read-out IC incorporates an active quenching and recharge circuit, and an in-pixel time-to-digital converter with 318 ps resolution for providing stable Geiger-mode operation of the InGaAs SPAD pixels and a simultaneous time-resolving function. The uniformity of the electrical field in the entire two-dimensional area is one of the key characteristics as it affects most performance parameters. The breakdown voltage mapping revealed the SPAD array has an excellent uniformity. Full characterizations of dark count rate, photon detection probability, and timing jitter were performed and will be discussed. Methods of suppressing afterpulses were examined by utilizing an adjustable hold-off function. The results showed that the function worked effectively to reduce the afterpulse probability. Finally we prove that the InGaAs SPAD image sensor has the capability of accurate timing detection for constructing a flash LIDAR in the near future.
引用
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页数:14
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