A new partial SOI power device structure with P-type buried layer

被引：60

作者：

Duan, BX ^{[1
]}

Zhang, B ^{[1
]}

Li, ZJ ^{[1
]}

机构：

[1] Univ Elect Sci & Technol, Res Inst Microelect, Chengdu 610054, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 12期

关键词：

BPSOI; additional electric field modulation; breakdown voltage; specific on-resistance;

D O I：

10.1016/j.sse.2005.09.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new BPSOI (buried layer partial SOI) structure is developed, in which the P-type buried layer is implanted into the P- substrate by silicon window underneath the source of the conventional PSOI. The mechanism of breakdown is that the additional electric field produced by P-type buried layer charges modulates surface electric field, which decreases drastically the electric field peaks near the drain and source junctions. Moreover.. the on-resistance of BPSOI is decreased as a result of increasing drift region doping due to neutralism of P-type buried layer. The results indicate that the breakdown voltage of BPSOI is increased by 52-58% and the on-resistance is decreased by 45-48% in comparison to conventional PSOI in virtue of 2-D numerical simulations using MEDICI. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1965 / 1968

页数：4

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