Solution Processed Organic Transistors on Polymeric Gate Dielectric with Mobility Exceeding 15 cm2 V-1 s-1

被引：12
作者：
Bilgaiyan, Anubha [1 ]
Cho, Seung-Il [1 ]
Abiko, Miho [1 ]
Watanabe, Kaori [1 ]
Mizukami, Makoto [1 ]
机构：
[1] Yamagata Univ, Innovat Ctr Organ Elect, 1-808-48 Arcadia, Yonezawa, Yamagata 9920119, Japan
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2020年 / 14卷 / 08期
关键词：
DNTT derivatives; mobility; organic thin-film transistors; polymeric gate dielectrics; solution-processed devices; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; LARGE-AREA; OVERESTIMATION;
D O I：
10.1002/pssr.202000156
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Herein, 6,6 ' bis (trans-4-pentylcyclohexyl)-dinaphtho[2,1-b:2 ',1 '-f ]thieno[3,2-b]thiophene (5H-21DNTT)-a solution-processable derivative of DNTT-is characterized and studied for its potential as a crystalline solution-processed organic semiconductor to achieve high mobility and stable organic thin-film transistor (OTFT) operation. The performance of a bottom-gate, bottom-contact OTFT with a 5H-21DNTT semiconductor is analyzed with different polymeric organic gate dielectrics via various solution-processed techniques. In comparison to other polymeric gate dielectrics, Parylene C exhibited a superior performance for 5H-21DNTT OTFT devices, and the OTFT devices show a remarkable average mobility of 10.9 cm(2) V-1 s(-1), as well as a maximum mobility exceeding 15 cm(2) V-1 s(-1), with a 100% reliability factor.
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页数：6
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