Modeling and parameterization of photoelectrons emitted in condensed matter by linearly polarized synchrotron radiation

被引:12
作者
Jablonski, A. [1 ]
机构
[1] Polish Acad Sci, Inst Phys Chem, Ul Kasprzaka 44-52, PL-01224 Warsaw, Poland
关键词
Hard xray photoelectron spectroscopy (HAXPES); Linearly polarized synchrotron radiation; Simulation of photoelectron transport; Mean escape depth; Information depth; Effective attenuation length; ANGULAR-DISTRIBUTION PARAMETERS; X-RAY PHOTOEMISSION; EFFECTIVE ATTENUATION LENGTHS; AUGER-ELECTRON-SPECTROSCOPY; RANGE; 100-5000; EV; ESCAPE PROBABILITY; ENERGY; DISTRIBUTIONS; SOLIDS; ATOMS;
D O I
10.1016/j.susc.2017.10.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Growing availability of synchrotron facilities stimulates an interest in quantitative applications of hard X-ray photoemission spectroscopy (HAXPES) using linearly polarized radiation. An advantage of this approach is the possibility of continuous variation of radiation energy that makes it possible to control the sampling depth for a measurement. Quantitative applications are based on accurate and reliable theory relating the measured spectral features to needed characteristics of the surface region of solids. A major complication in the case of polarized radiation is an involved structure of the photoemission cross-section for hard X-rays. In the present work, details of the relevant formalism are described and algorithms implementing this formalism for different experimental configurations are proposed. The photoelectron signal intensity may be considerably affected by variation in the positioning of the polarization vector with respect to the surface plane. This information is critical for any quantitative application of HAXPES by polarized X-rays. Different quantitative applications based on photoelectrons with energies up to 10 keV are considered here: (i) determination of surface composition, (ii) estimation of sampling depth, and (iii) measurements of an overlayer thickness. Parameters facilitating these applications (mean escape depths, information depths, effective attenuation lengths) were-calculated for a number of photoelectron lines in four elemental solids (Si, Cu, Ag and Au) in different experimental configurations and locations of the polarization vector. One of the considered configurations, with polarization vector located in a plane perpendicular to the surface, was recommended for quantitative applications of HAXPES. In this configurations, it was found that the considered parameters vary weakly in the range of photoelectron emission angles from normal emission to about 50 degrees with respect to the surface normal. The averaged values of the mean escape depth and effective attenuation length were approximated with accurate predictive formulas. The predicted effective attenuation lengths were compared with published values; major discrepancies observed can be ascribed to a possibility of discontinuous structure of the deposited overlayer. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 137
页数:17
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