Pure-silica zeolite low-k dielectric thin films

被引：2

作者：

Wang, ZB ^{[1
]}

Wang, HT ^{[1
]}

Mitra, A ^{[1
]}

Huang, LM ^{[1
]}

Yan, YS ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Environm Chem & Engn, Riverside, CA 92521 USA

来源：

ADVANCED MATERIALS | 2001年 / 13卷 / 10期

关键词：

D O I：

10.1002/1521-4095(200105)13:10<746::AID-ADMA746>3.0.CO;2-J

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Continuous thin silicalite films (250-500 nm) were synthesized on silicon wafer by in-situ crystallization and were shown to have excellent mechanical strength, adhesion, and hydrophobicity. The dielectric constant of these films was found to be 2.7-3.3. Spin-on silicalite films with higher porosity have a dielectric constant of 1.8-2.1.

引用

页码：746 / 749

页数：4

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