Prediction of scratch generation in chemical mechanical planarization

被引：65

作者：

Chandra, A. ^{[1
,2
]}

Karra, P. ^{[1
]}

Bastawros, A. F. ^{[2
]}

Biswas, R. ^{[3
]}

Sherman, P. J. ^{[2
]}

Armini, S. ^{[4
]}

Lucca, D. A. ^{[5
]}

机构：

[1] Iowa State Univ, Dept Mech Engn, Ames, IA 50014 USA

[2] Iowa State Univ, Dept Aerosp Engn, Ames, IA USA

[3] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA USA

[4] IMEC, Leuven, Belgium

[5] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2008年 / 57卷 / 01期

基金：

美国国家科学基金会;

关键词：

planarization; agglomeration; defectivity;

D O I：

10.1016/j.cirp.2008.03.130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A multi-scale model encompassing pad response and slurry behavior is developed to predict scratch propensity in a chemical mechanical planarization (CMP) process. The pad response delineates the interplay between the local particle level deformation and the cell level bending of the pad. The slurry agglomerates in the diffusion limited agglomeration (DLA) or reaction limited agglomeration (RLA) regime. Various nano-scale slurry properties significantly influence the spatial and temporal modulation of the material removal rate (MRR) and scratch generation characteristics. The model predictions are first validated against experimental observations. A parametric study is then undertaken. Such physically based models can be utilized to optimize slurry and pad designs to control the depth of generated scratches and their frequency of occurrence per unit area. (C) 2008 CIRP.

引用

页码：559 / 562

页数：4

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