Crystallography and Microstructure of 7M Martensite in Ni-Mn-Ga Thin Films Epitaxially Grown on (1 1 2 over bar 0)-Oriented Al2O3 Substrate

被引:1
|
作者
Yang, Bo [1 ]
Li, Zongbin [1 ]
Yan, Haile [1 ]
Zhang, Yudong [2 ,3 ]
Esling, Claude [2 ,3 ]
Zhao, Xiang [1 ]
Zuo, Liang [1 ]
机构
[1] Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang, Peoples R China
[2] Lab Etud Microstruct & Mecan Materiaux LEM3, CNRS UMR 7239, Universitede Lorraine, Metz, France
[3] Univ Lorraine, Lab Excellence Design Alloy Met Low mAss Struct DA, Metz 57045, Metz, France
基金
中国国家自然科学基金;
关键词
Ni-Mn-Ga thin films; magnetically-induced reorientation; ferromagnetic shape memory alloys; crystallography; EXCELLENT MECHANICAL-PROPERTIES; FIELD-INDUCED STRAIN; INDUCED REORIENTATION; MODULATED MARTENSITE; TRANSFORMATION; VARIANTS;
D O I
10.3390/ma15051916
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial Ni-Mn-Ga thin films have been extensively investigated, due to their potential applications in magnetic micro-electro-mechanical systems. It has been proposed that the martensitic phase in the < 1 1 0 >(A)-oriented film is much more stable than that in the < 1 0 0 >(A)-oriented film. Nevertheless, the magnetic properties, microstructural features, and crystal structures of martensite in such films have not been fully revealed. In this work, the < 1 1 0 >(A)-oriented Ni51.0Mn27.5Ga21.5 films with different thicknesses were prepared by epitaxially growing on Al2O3(1 1 2 over bar 0) substrate by magnetron sputtering. The characterization by X-ray diffraction technique and transmission electron microscopy revealed that all the Ni51.0Mn27.5Ga21.5 films are of 7M martensite at the ambient temperature, with their Type-I and Type-II twinning interfaces nearly parallel to the substrate surface.
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页数:9
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