The influence of channel length on total ionizing dose effect in deep submicron technologies

被引：10

作者：

Hu Zhi-Yuan ^{[1
,2
]}

Liu Zhang-Li ^{[1
,2
]}

Shao Hua ^{[1
]}

Zhang Zheng-Xuan ^{[1
]}

Ning Bing-Xu ^{[1
,2
]}

Bi Da-Wei ^{[1
]}

Chen Ming ^{[1
,2
]}

Zou Shi-Chang ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

来源：

ACTA PHYSICA SINICA | 2012年 / 61卷 / 05期

关键词：

total ionizing dose; shallow trench isolation; oxide trapped charge; metal-oxide-semiconductor field effect transistor;

D O I：

10.7498/aps.61.050702

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determined by the charges trapped in the oxide. The off-state leakage due to the charges trapped in the shallow trench isolation oxide inverting the parasitic sidewall channel has correlation with the channel length. A shorter channel leads to a larger leakage current. For the first time, we report that the leakage current also exhibits the radiation enhanced channel-length modulation effect, which further degrades the device performance.

引用

页数：5

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