MOS3: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs

被引：23

作者：

Kloes, Alexander ^{[1
]}

Schwarz, Mike ^{[2
]}

Holtij, Thomas ^{[2
]}

机构：

[1] Tech Hsch Mittelhessen, Competence Ctr Nanotechnol & Photon, D-35390 Giessen, Germany

[2] Univ Rovira & Virgili, Tarragona 43003, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 02期

关键词：

Compact model; drain-current model; FinFET; metal-oxide-semiconductor field-effect transistor (MOSFET); multigate; short channel; 3-D; triple gate; BARRIER; FINFETS;

D O I：

10.1109/TED.2011.2176945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new compact drain-current model for double-gate or triple-gate silicon on insulator (SOI) metal-oxide-semiconductor field-effect transistors, which is based on a physics-based 3-D analysis. Explicit analytical model equations for the height of the potential barrier are derived in closed form from a 3-D model for the channel electrostatics without the need to introduce any fitting parameter. The device current is described by a superposition of a surface-channel current above threshold and a center current in the subthreshold region, accounting for the movement of the most leaky path in the device cross section. Comparison with Technology Computer Aided Design (TCAD) shows a good scalability of the model down to a gate length of 30 nm. Furthermore, the I-V characteristics are compared with measurements and obtain accurate results down to an effective channel length of 53 nm.

引用

页码：349 / 358

页数：10