Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

被引：15

作者：

Gogneau, N. ^{[1
]}

Balan, A. ^{[2
]}

Ridene, M. ^{[1
]}

Shukla, A. ^{[2
]}

Ouerghi, A. ^{[1
]}

机构：

[1] CNRS LPN, F-91400 Marcoussis, France

[2] Univ Paris 06, CNRS IMPMC, F-75005 Paris, France

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 3-4期

关键词：

Epitaxial graphene layer; SiC; Leed; AFM; GRAPHENE; LAYERS;

D O I：

10.1016/j.susc.2011.09.021

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the evolution of the surface graphitization as a function of the synthesis temperature. We establish that the carbon enrichment of the surface is characterized by a clear modulation of the surface potential and structuration. The structural properties analysis of the graphene layers by low energy electron diffraction and micro-Raman spectroscopy demonstrate a graphitization of the surface. (C) 2011 Elsevier B.V. All rights reserved.

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页码：217 / 220

页数：4

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