Critical thickness of AlN thin film grown on Al2O3(0001)

被引：14
作者：
Kim, JW
Hwang, YH
Cho, JH
Kim, HK [1 ]
机构：
[1] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 07期
关键词：
thin film; X-ray scattering; sputtering; epitaxy; critical thickness;
D O I：
10.1143/JJAP.40.4677
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality thin aluminum nitride films of different thicknesses between 17 A and 1000 Angstrom, were grown on sapphire (0001) by DC-faced target sputtering at 500 degreesC. A change in lattice constants of films due to a lattice mismatch between films and substrates was observed. The growth mechanism of epitaxial AIN film in the early stage was found to be consistent with the extended atomic distance mismatch (EADM) model. From the fitting result of the lattice constant as a function of thickness based on the equilibrium theory, the critical thickness at which dislocations are introduced into AIN films grown on Al2O3(0001) was estimated as similar to 4.5 Angstrom.
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收藏
页码：4677 / 4679
页数：3
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