Effects of Control Parameters on Oxygen Distribution in Czochralski Crystal Growth Process

The application of a quadrupole magnetic field structure with low power consumption and high field strength is very effective in solving the problem of non-uniformity of oxygen concentration distribution in the process of industrial drawing single crystal silicon by MCZ method. In this paper, a 3D model is used to simulate the crystal growth process under the action of quadrupole magnetic field for accurately describe the effect of control parameters on the oxygen concentration distribution at the crystal-melt interface. The results show that the radial oxygen concentration gradient at the crystal-melt interface is positively correlated increases with the radial temperature gradient when the magnetic induction strength is increased, while the positive correlation decreases with the increase of the crucible rotation speed or the crystal rotation speed within the appropriate range. Moreover, the uniformity of the radial oxygen concentration distribution at the crystal-melt interface can be improved by about 19.11% when the crystal rotation speed is higher and the crucible rotation speed is lower, which is more favorable for improving the quality of the silicon single crystal.