Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

被引:140
作者
Paik, Hanjong [1 ]
Chen, Zhen [2 ]
Lochocki, Edward [3 ]
Seidner, Ariel H. [1 ]
Verma, Amit [4 ]
Tanen, Nicholas [1 ,5 ]
Park, Jisung [1 ]
Uchida, Masaki [6 ,7 ]
Shang, ShunLi [8 ]
Zhou, Bi-Cheng [8 ]
Brutzam, Mario [9 ]
Uecker, Reinhard [9 ]
Liu, Zi-Kui [8 ]
Jena, Debdeep [1 ,5 ]
Shen, Kyle M. [3 ,10 ]
Muller, David A. [2 ,10 ]
Schlom, Darrell G. [1 ,10 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[3] Cornell Univ, Dept Phys, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
[4] IIT Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[5] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[7] Univ Tokyo, QPEC, Tokyo 1138656, Japan
[8] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[9] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
[10] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
ATOMIC-ABSORPTION SPECTROSCOPY; DISLOCATION SCATTERING; ELECTRON-MOBILITY; FILM DEPOSITION; CONDUCTIVITY; OXIDE; GAAS; EQUILIBRIA; SRTIO3; FLUX;
D O I
10.1063/1.5001839
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm(2) V-1 s(-1) at room temperature and 400 cm(2) V-1 s(-1) at 10 K despite the high concentration (1.2 x 10(11) cm(-2)) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)(2) Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects-possibly (BaO)(2) crystallographic shear defects or point defects-significantly reduce the electron mobility. (C) 2017 Author(s).
引用
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页数:11
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