Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

被引：140

作者：

Paik, Hanjong ^{[1
]}

Chen, Zhen ^{[2
]}

Lochocki, Edward ^{[3
]}

Seidner, Ariel H. ^{[1
]}

Verma, Amit ^{[4
]}

Tanen, Nicholas ^{[1
,5
]}

Park, Jisung ^{[1
]}

Uchida, Masaki ^{[6
,7
]}

Shang, ShunLi ^{[8
]}

Zhou, Bi-Cheng ^{[8
]}

Brutzam, Mario ^{[9
]}

Uecker, Reinhard ^{[9
]}

Liu, Zi-Kui ^{[8
]}

Jena, Debdeep ^{[1
,5
]}

Shen, Kyle M. ^{[3
,10
]}

Muller, David A. ^{[2
,10
]}

Schlom, Darrell G. ^{[1
,10
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Dept Phys, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA

[4] IIT Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

[5] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[7] Univ Tokyo, QPEC, Tokyo 1138656, Japan

[8] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[9] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[10] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APL MATERIALS | 2017年 / 5卷 / 11期

基金：

美国国家科学基金会;

关键词：

ATOMIC-ABSORPTION SPECTROSCOPY; DISLOCATION SCATTERING; ELECTRON-MOBILITY; FILM DEPOSITION; CONDUCTIVITY; OXIDE; GAAS; EQUILIBRIA; SRTIO3; FLUX;

D O I：

10.1063/1.5001839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm(2) V-1 s(-1) at room temperature and 400 cm(2) V-1 s(-1) at 10 K despite the high concentration (1.2 x 10(11) cm(-2)) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)(2) Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects-possibly (BaO)(2) crystallographic shear defects or point defects-significantly reduce the electron mobility. (C) 2017 Author(s).

引用

页数：11

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