A 25 dBm Outphasing Power Amplifier With Cross-Bridge Combiners

被引:25
作者
Ding, Lei [1 ]
Hur, Joonhoi [1 ]
Banerjee, Aritra [1 ]
Hezar, Rahmi [1 ]
Haroun, Baher [1 ]
机构
[1] Texas Instruments Inc, Dallas, TX 75243 USA
关键词
Class-D; CMOS power amplifier; digital predistortion; LINC; non-isolated combiner; outphasing; ENHANCEMENT; MODULATION; CMOS;
D O I
10.1109/JSSC.2015.2403316
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a 25 dBm Class-D outphasing power amplifier (PA) with cross-bridge combiners. The Class-D PA is designed in a standard 45 nm process while the combiner is implemented on board using lumped elements for flexibilities in testing. Comparing with conventional non-isolated combiners, the elements of the cross-bridge combiner are carefully chosen so that additional resonance network is formed to reduce out-of-phase current, thereby increasing backoff efficiency of the outphasing PA. The Class-D outphasing PA with the proposed combiner is manufactured and measured at both 900 MHz and 2.4 GHz. It achieves 55% peak power-added efficiency (PAE) at 900 MHz and 45% at 2.4 GHz for a single tone input. For a 10 MHz LTE signal with 6 dB PAR, the PAE is 32% at 900 MHz with -39 dBc adjacent channel power ratio (ACPR) and 22% at 2.4 GHz with -33 dBc ACPR. With digital predistortion (DPD), the linearity of the PA at 2.4 GHz is improved further to reach -53 dBc, -50 dBc, -42 dBc ACPR for 10 MHz, 20 MHz, and 2-carrier 20 MHz LTE signals.
引用
收藏
页码:1107 / 1116
页数:10
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