Self-assembled growth of highly oriented para- sexiphenyl thin films

被引：20

作者：

Andreev, A

Sitter, H ^{[1
]}

Brabec, CJ

Hinterdorfer, P

Springholz, G

Sariciftci, NS

机构：

[1] Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria

[2] Univ Linz, Linz Inst Organ Solar Cells, A-4040 Linz, Austria

[3] Univ Linz, Inst Biophys, A-4040 Linz, Austria

来源：

SYNTHETIC METALS | 2001年 / 121卷 / 1-3期

关键词：

epitaxy; single crystalline thin films; oligomers; atomic force microscopy;

D O I：

10.1016/S0379-6779(00)00966-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used atomic force microscopy to investigate the structure of highly ordered para-sexiphenyl thin films grown by Hot Wall Epitaxy on mica. We have shown that the substrate temperature and the growth time are important parameters for control of the film morphology in terms of the degree of anisotropy and long range order.

引用

页码：1379 / 1380

页数：2

共 7 条

[1]

Andreev A, 2000, ADV MATER, V12, P629, DOI 10.1002/(SICI)1521-4095(200005)12:9<629::AID-ADMA629>3.3.CO

[2]

2-J

[3] MBE growth of para-hexaphenyl on GaAs(001)-2x4 [J].