A tale of two vacancies

被引：8

作者：

Cheng, W.

Liu, L.

Yu, P. Y. ^{[1
]}

Ma, Z. X.

Mao, S. S.

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

ANNALEN DER PHYSIK | 2011年 / 523卷 / 1-2期

关键词：

Vacancies; impurity-defect complexes; magnetic semiconductors; GaN; CdTe; local vibration modes; GENERALIZED GRADIENT APPROXIMATION; FERROMAGNETISM; GAN;

D O I：

10.1002/andp.201000110

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper we have applied first-principle density-functional theory to calculate some of the interesting roles played by vacancies in material properties, such as magnetic properties and complex formation. We use as examples our recent results on vacancies in group III-V semiconductors like GaN and II-VI semiconductor like CdTe. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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收藏

页码：129 / 136

页数：8

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