Epitaxial superconducting δ-MoN and δ-NbN thin films by a chemical solution deposition

被引:4
作者
Tong, H. Y. [1 ,2 ]
Zhang, H. L. [4 ]
Hui, Z. Z. [5 ]
Tang, X. W. [1 ]
Wei, R. H. [1 ]
Song, W. H. [1 ]
Hu, L. [1 ]
Cai, C. B. [6 ]
Zhu, X. B. [1 ]
Sun, Y. P. [1 ,3 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
[4] Xian Univ Posts & Telecommun, Sch Sci, Xian 710061, Peoples R China
[5] Anhui Sci & Technol Univ, Coll Chem & Mat Engn, Fengyang 233100, Anhui, Peoples R China
[6] Shanghai Univ, Phys Dept, Shanghai Key Lab High Temp Superconductors, Shanghai 200444, Peoples R China
基金
中国国家自然科学基金;
关键词
Epitaxial thin film; Superconducting; Chemical solution deposition; HIGH-PRESSURE SYNTHESIS; NITRIDE FILMS; TRANSPORT; TEMPERATURE; CRYSTAL; NIOBIUM;
D O I
10.1016/j.jallcom.2020.154231
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial superconducting delta-MoN and delta-NbN thin films, exhibiting a superconducting transition temperature (T-c(onset)) of 13 K and 10.3 K, respectively, were prepared by a simple chemical solution deposition on c-cut Al2O3 substrates. A sharp transition and the large residual resistivity ratio (RRR) rho(300K)/rho(onset) of delta-MoN and delta-NbN thin films suggest high quality of the prepared epitaxial thin films. The critical current density (J(c)) under 100 Oe at 5 K is of 1.37 and 0.74 MA/cm(2) for the delta-MoN and delta-NbN thin films, respectively. The results will provide a facile route to prepare epitaxial superconducting metal nitride thin films. (C) 2020 Elsevier B.V. All rights reserved.
引用
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页数:6
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