STM characterization of extended dislocation configurations in Au(001)

被引：45

作者：

de la Figuera, J ^{[1
]}

Gonzalez, MA

Garcia-Martinez, R

Rojo, JM

Hernan, OS

de Parga, ALV

Miranda, R

机构：

[1] Univ Complutense, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.58.1169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) of Au(001) single crystals has been used to characterize dislocation configurations resulting mainly from nanoindentation of the surface by contact with the STM tip. The Burgers vectors and directions of the different extended dislocations are identified by comparing STM pictures.with simulated images of the corresponding atomic configurations. We describe a configuration consisting of an unfaulted dislocation loop split into two pairs of Shockley partials, linked by a stair-rod segment that holds the two stacking-fault ribbons. The separation between Shockley partials in the extended dislocations is found to be larger than in the bulk: [S0163-1829(98)04527-5].

引用

页码：1169 / 1172

页数：4

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