LaInO3/BaSnO3 polar interface on MgO substrates

被引:39
|
作者
Kim, Youjung [1 ]
Kim, Young Mo [1 ]
Shin, Juyeon [1 ]
Char, Kookrin [1 ]
机构
[1] Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South Korea
来源
APL MATERIALS | 2018年 / 6卷 / 09期
关键词
SHUBNIKOV-DEHAAS OSCILLATIONS; 2-DIMENSIONAL ELECTRON-GAS; SUPERCONDUCTIVITY; HETEROSTRUCTURES; COEXISTENCE;
D O I
10.1063/1.5046368
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on a new property of the LaInO3 (LIO)/(Ba,La)SnO3 (BLSO) polar interface using MgO substrates. The growth of well-formed LIO/BLSO interface structures on non-perovskite MgO substrates was confirmed by reciprocal space mapping image and transmission electron microscopy. Subsequently, we measured electrical properties as a function of the La doping rate of the BLSO layer and found that the LIO/BLSO polar interface shows conductance enhancement after the deposition of the polar LaInO3 layer on the BLSO layer, in agreement with our earlier results on SrTiO3 (STO) substrates. However, different electrical properties of the interfaces were found on MgO from those on STO substrates; we observed conductance enhancement even at the interface with undoped BaSnO3 (BSO) on the MgO substrates. We attribute such different behavior to the difference in the Fermi levels of BSO on MgO and STO substrates, either due to the larger donor density or the smaller acceptor density in BSO on MgO. Using such a nominally undoped interface, we fabricated the field effect transistors and presented their performances with I-on/I-off similar to 10(9). (C) 2018 Author(s).
引用
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页数:7
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