Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

被引：28
|
作者：
Lin, YJ [1 ]
Lee, HY [1 ]
Hwang, FT [1 ]
Lee, CT [1 ]
机构：
[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 05期
关键词：
gallium nitride; ohmic contacts; specific contact resistance; surface treatment;
D O I：
10.1007/s11664-001-0094-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ohmic contacts to n-type GaN with low contact resistance were developed lay (NH4)(2)S-x and KOH+(NH4)(2)S-x surface treatments prior to Ti/Al metal deposition The lowest specific contact resistance of 3.0 x 10(-6) Ohm -cm(2) was obtained for Ti/Al contacts in an (NH4)(2)S-x-treated GaN layer alloyed at 300 degreesC for 3 min. To obtain the lowest specific contact resistance for a low temperature alloy, the (NH4)(2)S-x treatment conditions for both (NH4)(2)S-x and KOH+(NH4)(2)S-x-treated n-GaN layers have been investigated and the mechanism for ohmic formation in low temperature alloys analyzed.
引用
收藏
页码：532 / 537
页数：6
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