Measurement of electric characteristics of lateral magnetotransistor

被引：0

作者：

Koslov, Anton V. ^{[1
]}

Tikhonov, Robert D. ^{[2
]}

机构：

[1] Tech Univ, Moscow State Inst Elect Engn, Moscow, Russia

[2] MIEE, SMC Technol Ctr, Stade, Germany

来源：

EDM 2007: 8TH INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS | 2007年

关键词：

microsystem; magnetotransistor; sensitivity; magnetosensitivity element;

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

At absence of a magnetic field measurements of electric characteristics of samples p-n-p lateral dual-collector bipolar magnetosensitivity transistors in diffusion well are lead, which were made on the basis of SMC "Technological Center". Measurements were spent at inclusion of the transistor under scheme CE (common emitter) at the torn off contact to a substrate and at association of contacts of a substrate and base. Communication between the attitude of a full current of collectors to the general current of base and a substrate with factor of increasing of a base current is shown.

引用

页码：97 / +

页数：2