Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors

被引：64

作者：

Li, T ^{[1
]}

Lambert, DJH ^{[1
]}

Wong, MM ^{[1
]}

Collins, CJ ^{[1
]}

Yang, B ^{[1
]}

Beck, AL ^{[1
]}

Chowdhury, U ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 04期

关键词：

AlGaN; photodetector; p-i-n photodiode;

D O I：

10.1109/3.914403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth, fabrication and characterization of Al0.4Ga0.6N-Al0.6Ga0.6N back-illuminated, solar-blind p-i-n photodiodes. The peak responsivity of the photodiodes is 27 and 79 mA/W at lambda approximate to 280 mn for bias voltages of 0 V and -60 V, respectively, with a UV-to-visible rejection ratio of more than three decades (at 400 nm), These devices exhibit very low dark current densities (similar to5 nA/cm(2) at -10 V), At low frequencies, the noise exhibits a 1/f-type behavior. The noise power density is S-0 approximate to 5 x 10(-25) A(2)/Hz at -12.7 V and the detectivity (D*) at 0 V is estimated to be in the range of 4 x 10(11)-5 x 10(13) cm.Hz(1/2)/W. Time-domain pulse response measurements in a front-illumination configuration indicate that the devices are RC-time limited and show a strong spatial dependence with respect to the position of the incident excitation, which is mainly due to the high resistivity of the p-type Al0.4Ga0.6 N layer.

引用

页码：538 / 545

页数：8

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