490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics

被引：5

作者：

Liu, Kai ^{[1
,2
]}

Wang, Chong ^{[1
,2
]}

Zheng, Xuefeng ^{[1
,2
]}

Ma, Xiaohua ^{[1
,2
]}

Huang, Zeyang ^{[1
,2
]}

He, Yunlong ^{[1
,2
]}

Li, Ang ^{[1
,2
]}

Zhao, Yaopeng ^{[1
,2
]}

Mao, Wei ^{[1
,2
]}

Hao, Yue ^{[1
,2
]}

机构：

[1] Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Microelect, 2 Taibai South Rd, Xian 710071, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2021年 / 186卷

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

AlGaN; GaN; HEMT; P-GaN cap layer; Post gate annealing; High-temperature characteristics; GATE INJECTION TRANSISTOR; ALGAN/GAN HEMTS; DEPLETION MODE; PLASMA; DAMAGE; PERFORMANCE; SUBSTRATE; METAL;

D O I：

10.1016/j.sse.2021.108109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 degrees C for 10 min is utilized to improve the devices' characteristics. As a result, the p-GaN HEMTs achieve a high drain current (IDS) of 490 mA/mm at VGS = 7 V with a high threshold voltage (VTH) of 1.9 V. Meanwhile, the pulse measurements show good dynamic characteristics, and the temperature-dependent characteristics indicate that the VTH has excellent high-temperature stability from 25 degrees C to 175 degrees C. Besides, it can be found that the temperature will affect the capacitance-voltage (C-V) and transconductance curves, which is related to the hole energy and electron mobility at different temperatures.

引用

页数：5

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