Field-induced electric switching in sol-gel-derived SiO2 films

被引：5

作者：

Hu, J ^{[1
]}

Ward, S ^{[1
]}

Wang, Q ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1618950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The switching dynamics of sol-gel-derived SiO2 films is investigated using voltage pulses over durations from 300 ns to 1 s and amplitudes from 1 to 20 V. The SiO2 film was fabricated using a spin-coating technique and annealed at 100 degreesC. The shortest switching transit time is found to be on the order of 10 ns. A delay time ranging from 100 ns to 500 ms is usually observed prior to switching, which changes exponentially with the electric field at switching, and also depends strongly on the area of the device. (C) 2003 American Institute of Physics.

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页码：3153 / 3155

页数：3

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