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Synthesis and field-emission properties of aligned MoO3 nanowires
被引:127
作者:

Zhou, J
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Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China

Deng, SZ
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Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China

Xu, NS
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Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China

Chen, J
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Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China

She, JC
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Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China
机构:
[1] Sun Yat Sen Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangdong 510275, Peoples R China
关键词:
D O I:
10.1063/1.1613992
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Aligned MoO3 nanowires have been grown on silicon substrates without using any catalyst. They were prepared in a two-step process: first by thermal evaporation and then further processed by oxidation. The MoO3 nanowires are of crystalline and have an orthorhombic structure. They also have high purity. Field-emission measurement showed that, typically, their turn-on field and threshold field were about 3.5 and 7.65 MV/m, respectively. Furthermore, the spatial distribution of emission sites was studied using transparent anode technique and the emission current of the sites was relatively uniform. These may be attributed to very good uniformity in the height and diameter of the nanowires, and to the separation between nanowires. Finally, the stability of the emission current over time was found to be within 10%. These findings indicate that MoO3 nanowires as a cold cathode have a potential future. (C) 2003 American Institute of Physics.
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页码:2653 / 2655
页数:3
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共 11 条
[1]
Field emission from crystalline copper sulphide nanowire arrays
[J].
Chen, J
;
Deng, SZ
;
Xu, NS
;
Wang, SH
;
Wen, XG
;
Yang, SH
;
Yang, CL
;
Wang, JN
;
Ge, WK
.
APPLIED PHYSICS LETTERS,
2002, 80 (19)
:3620-3622

Chen, J
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Deng, SZ
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Xu, NS
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Wang, SH
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Wen, XG
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Yang, SH
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Yang, CL
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Wang, JN
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

Ge, WK
论文数: 0 引用数: 0
h-index: 0
机构: Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China
[2]
Synthesis of silicon carbide nanowires in a catalyst-assisted process
[J].
Deng, SZ
;
Wu, ZS
;
Zhou, J
;
Xu, NS
;
Chen, R
;
Chen, J
.
CHEMICAL PHYSICS LETTERS,
2002, 356 (5-6)
:511-514

Deng, SZ
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Wu, ZS
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Zhou, J
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Xu, NS
论文数: 0 引用数: 0
h-index: 0
机构:
Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Chen, R
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Chen, J
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Dept Phys, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
[3]
Work function at the tips of multiwalled carbon nanotubes
[J].
Gao, RP
;
Pan, ZW
;
Wang, ZL
.
APPLIED PHYSICS LETTERS,
2001, 78 (12)
:1757-1759

Gao, RP
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Pan, ZW
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Wang, ZL
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[4]
Optical and electrochromic properties of heated and annealed MoO3 thin films
[J].
Hussain, Z
.
JOURNAL OF MATERIALS RESEARCH,
2001, 16 (09)
:2695-2708

Hussain, Z
论文数: 0 引用数: 0
h-index: 0
机构:
Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England
[5]
Field emission from well-aligned zinc oxide nanowires grown at low temperature
[J].
Lee, CJ
;
Lee, TJ
;
Lyu, SC
;
Zhang, Y
;
Ruh, H
;
Lee, HJ
.
APPLIED PHYSICS LETTERS,
2002, 81 (19)
:3648-3650

Lee, CJ
论文数: 0 引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

Lee, TJ
论文数: 0 引用数: 0
h-index: 0
机构: Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

Lyu, SC
论文数: 0 引用数: 0
h-index: 0
机构: Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

Zhang, Y
论文数: 0 引用数: 0
h-index: 0
机构: Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

Ruh, H
论文数: 0 引用数: 0
h-index: 0
机构: Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

Lee, HJ
论文数: 0 引用数: 0
h-index: 0
机构: Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea
[6]
Low-temperature synthesis of large-scale single-crystal molybdenum trioxide (MoO3) nanobelts
[J].
Li, XL
;
Liu, JF
;
Li, YD
.
APPLIED PHYSICS LETTERS,
2002, 81 (25)
:4832-4834

Li, XL
论文数: 0 引用数: 0
h-index: 0
机构:
Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China

Liu, JF
论文数: 0 引用数: 0
h-index: 0
机构:
Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China

Li, YD
论文数: 0 引用数: 0
h-index: 0
机构:
Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China Tsinghua Univ, Minist Educ China, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China
[7]
Field emission from MoO3 nanobelts
[J].
Li, YB
;
Bando, Y
;
Golberg, D
;
Kurashima, K
.
APPLIED PHYSICS LETTERS,
2002, 81 (26)
:5048-5050

Li, YB
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan

Bando, Y
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan

Golberg, D
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan

Kurashima, K
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan Natl Inst Mat Sci, Adv Mat Lab, Adv Beam Anal Stn, Tsukuba, Ibaraki 3050044, Japan
[8]
Nanobelts of semiconducting oxides
[J].
Pan, ZW
;
Dai, ZR
;
Wang, ZL
.
SCIENCE,
2001, 291 (5510)
:1947-1949

Pan, ZW
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Dai, ZR
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

Wang, ZL
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[9]
Needle-shaped silicon carbide nanowires: Synthesis and field electron emission properties
[J].
Wu, ZS
;
Deng, SZ
;
Xu, NS
;
Chen, J
;
Zhou, J
;
Chen, J
.
APPLIED PHYSICS LETTERS,
2002, 80 (20)
:3829-3831

Wu, ZS
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Deng, SZ
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Xu, NS
论文数: 0 引用数: 0
h-index: 0
机构:
Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Chen, J
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Zhou, J
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

Chen, J
论文数: 0 引用数: 0
h-index: 0
机构: Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
[10]
PHOTOCHROMISM INDUCED IN AN ELECTROLYTICALLY PRETREATED MOO3 THIN-FILM BY VISIBLE-LIGHT
[J].
YAO, JN
;
HASHIMOTO, K
;
FUJISHIMA, A
.
NATURE,
1992, 355 (6361)
:624-626

YAO, JN
论文数: 0 引用数: 0
h-index: 0
机构: Department of Synthetic Chemistry, Faculty of Engineering, University of Tokyo, Bunkyoku, Tokyo 113, 7-3-1, Hongo

HASHIMOTO, K
论文数: 0 引用数: 0
h-index: 0
机构: Department of Synthetic Chemistry, Faculty of Engineering, University of Tokyo, Bunkyoku, Tokyo 113, 7-3-1, Hongo

FUJISHIMA, A
论文数: 0 引用数: 0
h-index: 0
机构: Department of Synthetic Chemistry, Faculty of Engineering, University of Tokyo, Bunkyoku, Tokyo 113, 7-3-1, Hongo