Thermal oxidation fabrication of NiO film for optoelectronic devices

被引：43

作者：

Zhang, Yidong ^{[1
]}

机构：

[1] Xuchang Univ, Inst Surface Micro & Nano Mat, Key Lab Micronano Energy Storage & Convers Mat He, Xuchang 461000, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2015年 / 344卷

关键词：

NiO films; Magnetron sputter; Thermal oxidation; Optoelectronic; OPTICAL-PROPERTIES; CHARGE-TRANSPORT; OXIDE; METAL; LAYER;

D O I：

10.1016/j.apsusc.2015.03.099

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, NiO coating was fabricated by magnetron sputtering method on quartz and indium tin oxide (ITO) substrates in an inert gas ambient of Ar followed by a thermal oxidation process in air at 400 degrees C for 2 h. The NiO coating was analyzed by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and UV-vis spectrometer. A preliminary photovoltaic performance measurement of the as-prepared device (ITO/NiO/poly-TPD/PC71BM/Al) shows a short circuit current density (J(sc)) of 5.6 mA cm(-2) and power conversion efficiency (PCE) of 1.5% under an illumination of 100 mW cm(-2). The PCE of device with NiO HTLs was ca. 20% higher than those of the devices based on PEDOT:PSS hole transport layers (HTLs). The thermal oxidation fabricated NiO coating may provide an excellent route to fabricate other NiO-based optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：33 / 37

页数：5

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