Angular dependence of tunnel magnetoresistance in magnetic tunnel junctions and specific aspects in spin-filtering devices

被引:5
作者
Montaigne, F. [1 ]
Tiusan, C. [1 ]
Hehn, M. [1 ]
机构
[1] Nancy Univ, Inst Jean Lamour, CNRS, F-54506 Vandoeuvre Les Nancy, France
关键词
band model of magnetism; ferromagnetism; magnetoresistive devices; parabolic equations; tunnelling magnetoresistance; ROOM-TEMPERATURE; ELECTRIC-CURRENT; FERROMAGNETS; EXCITATION; BARRIER;
D O I
10.1063/1.3466778
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a general formalism to describe accurately the angular dependence of the magnetoresistance. A parabolic band model is used to determine without approximation the conductance of arbitrary complex heterostructures. Simple analytical expressions are obtained in some limit cases. Particularly, we show that significant deviation from the cosine dependence is expected for ferromagnetic barriers. Numerical computations are used to quantify the deviation from the cosine dependence for normal and ferromagnetic barriers and support the precedent conclusion. Finally, the influence of the applied voltage on the angular dependence of magnetoresistance is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3466778]
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Perpendicular Magnetic Tunnel Junctions With Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance
    Tezuka, N.
    Oikawa, S.
    Abe, I.
    Matsuura, M.
    Sugimoto, S.
    Nishimura, K.
    Seino, T.
    IEEE MAGNETICS LETTERS, 2016, 7
  • [42] Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions
    Feng, J. F.
    Feng, Gen
    Ma, Q. L.
    Han, X. F.
    Coey, J. M. D.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (19) : 3046 - 3048
  • [43] Intrinsic spin noise in MgO magnetic tunnel junctions
    Delgado, F.
    Lopez, K.
    Ferreira, R.
    Fernandez-Rossier, J.
    APPLIED PHYSICS LETTERS, 2013, 102 (06)
  • [44] Spin dependent transport in diluted magnetic semiconductor/superconductor tunnel junctions
    Shokri, A. A.
    Negarestani, S.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2014, 507 : 75 - 80
  • [45] Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier
    Tsunegi, S.
    Sakuraba, Y.
    Oogane, M.
    Telling, N. D.
    Shelford, L. R.
    Arenholz, E.
    van der Laan, G.
    Hicken, R. J.
    Takanashi, K.
    Ando, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (19)
  • [46] Investigation of epitaxial growth and tunnel magnetoresistance effects in magnetic tunnel junctions including spinel ferrite layers
    Takahashi, Nozomi
    Kawai, Tomohiro
    Yanase, Takashi
    Shimada, Toshihiro
    Nagahama, Taro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (11)
  • [47] Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions
    Loong, Li Ming
    Qiu, Xuepeng
    Neo, Zhi Peng
    Deorani, Praveen
    Wu, Yang
    Bhatia, Charanjit S.
    Saeys, Mark
    Yang, Hyunsoo
    SCIENTIFIC REPORTS, 2014, 4
  • [48] Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions
    Gan, H. D.
    Sato, H.
    Yamanouchi, M.
    Ikeda, S.
    Miura, K.
    Koizumi, R.
    Matsukura, F.
    Ohno, H.
    APPLIED PHYSICS LETTERS, 2011, 99 (25)
  • [49] Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions With a Rocksalt ZnO/MgO Bilayer Tunnel Barrier
    Saito, Hidekazu
    Narayananellore, Sai Krishna
    Matsuo, Norihiro
    Doko, Naoki
    Kon, Shintaro
    Yasukawa, Yukiko
    Imamura, Hiroshi
    Yuasa, Shinji
    PHYSICAL REVIEW APPLIED, 2019, 11 (06)
  • [50] Giant Coulomb blockade magnetoresistance in magnetic tunnel junctions with a granular layer
    Zhang, X. -G.
    Wen, Z. C.
    Wei, H. X.
    Han, X. F.
    PHYSICAL REVIEW B, 2010, 81 (15)