Manipulating InAs nanowires with submicrometer precision

被引:32
作者
Floehr, Kilian [1 ,2 ]
Liebmann, Marcus [1 ,2 ]
Sladek, Kamil [3 ,4 ]
Guenel, H. Yusuf [3 ,4 ]
Frielinghaus, Robert [5 ,6 ]
Haas, Fabian [3 ,4 ]
Meyer, Carola [5 ,6 ]
Hardtdegen, Hilde [3 ,4 ]
Schaepers, Thomas [3 ,4 ]
Gruetzmacher, Detlev [3 ,4 ]
Morgenstern, Markus [1 ,2 ]
机构
[1] Rhein Westfal TH Aachen Klinikum, Inst Phys B 2, D-52074 Aachen, Germany
[2] Rhein Westfal TH Aachen Klinikum, JARA FIT, D-52074 Aachen, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
[4] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany
[5] Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
[6] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany
关键词
CARBON NANOTUBES;
D O I
10.1063/1.3657135
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 mu m using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si3N4 membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657135]
引用
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页数:3
相关论文
共 34 条
[1]   Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas [J].
Akabori, M. ;
Sladek, K. ;
Hardtdegen, H. ;
Schaepers, Th. ;
Gruetzmacher, D. .
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (15) :3813-3816
[2]   Non-Abelian statistics and topological quantum information processing in 1D wire networks [J].
Alicea, Jason ;
Oreg, Yuval ;
Refael, Gil ;
von Oppen, Felix ;
Fisher, Matthew P. A. .
NATURE PHYSICS, 2011, 7 (05) :412-417
[3]  
[Anonymous], LEICA DM 2500MH
[4]   Probing Electron-Electron Interaction in Quantum Hall Systems with Scanning Tunneling Spectroscopy [J].
Becker, S. ;
Karrasch, C. ;
Mashoff, T. ;
Pratzer, M. ;
Liebmann, M. ;
Meden, V. ;
Morgenstern, M. .
PHYSICAL REVIEW LETTERS, 2011, 106 (15)
[5]   Catalyst-free growth of GaN nanowires [J].
Bertness, KA ;
Sanford, NA ;
Barker, JM ;
Schlager, JB ;
Roshko, A ;
Davydov, AV ;
Levin, I .
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) :576-580
[6]   Electronic Phase Coherence in InAs Nanowires [J].
Bloemers, Ch. ;
Lepsa, M. I. ;
Luysberg, M. ;
Gruetzmacher, D. ;
Lueth, H. ;
Schaepers, Th. .
NANO LETTERS, 2011, 11 (09) :3550-3556
[7]   Fabrication and actuation of customized nanotweezers with a 25 nm gap [J].
Boggild, P ;
Hansen, TM ;
Tanasa, C ;
Grey, F .
NANOTECHNOLOGY, 2001, 12 (03) :331-335
[8]  
Boggild P., 2001, NANOTECHNOLOGY
[9]   Shear stress measurements on InAs nanowires by AFM manipulation [J].
Bordag, Michael ;
Ribayrol, Aline ;
Conache, Gabriela ;
Froeberg, Linus E. ;
Gray, Struan ;
Samuelson, Lars ;
Montelius, Lars ;
Pettersson, Hakan .
SMALL, 2007, 3 (08) :1398-1401
[10]   Vertical high-mobility wrap-gated InAs nanowire transistor [J].
Bryllert, T ;
Wernersson, LE ;
Fröberg, LE ;
Samuelson, L .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :323-325