Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes

被引:17
作者
Bolshakov, A. D. [1 ]
Mozharov, A. M. [1 ]
Sapunov, G. A. [1 ]
Fedorov, V. V. [1 ]
Dvoretckaia, L. N. [1 ]
Mukhin, I. S. [1 ,2 ]
机构
[1] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia
[2] ITMO Univ, Kronverkskiy 49, St Petersburg 197101, Russia
基金
俄罗斯基础研究基金会;
关键词
GAAS NANOWIRES; SILICON; PHASE;
D O I
10.1088/2053-1591/aa9e9d
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we study theoretically influence of group 3 and group 5 deposition rates on A3B5 nanowires (NWs) self-catalyzed vapor-liquid-solid (VLS) growth. Our self-consistent approach allows numerical calculation of chemical potential difference of the growth species, group 5 atomic concentration in the droplet and NW elongation rate for two-component system depending on deposition rates. It is found that chemical potential difference tends to saturation with increasing group 5 deposition rate (J(5)), while increase of group 3 deposition rate (J(3)) leads to its logarithmic growth. Two growth regimes are distinguished depending on relation between the deposition rates: high J(3) and low J(5) leads to adsorption-limited NW growth and in the opposite case nucleationlimited regime occurs. Nanowire elongation rate increases linearly with group 3 deposition rate in nucleation-limited regime. Further increase of the deposition rate leads to saturation of the growth rate in adsorption-limited regime. On the contrary, elongation rate grows linearly with group 5 deposition rate in adsorption-limited regime with slower linear growth in nucleation-limited regime.
引用
收藏
页数:7
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